Electron overflow of AlGaN deep ultraviolet light emitting diodes

نویسندگان

چکیده

We have studied the design, epitaxy, and performance characteristics of deep ultraviolet (UV) AlGaN light emitting diodes (LEDs). By combining tunnel junction polarization-engineered electron blocking layer, a maximum external quantum efficiency wall-plug 0.35% 0.21%, respectively, were measured for devices operating at ∼245 nm, which are over one order magnitude higher than previously reported this wavelength. Severe droop, however, was very low current densities (∼0.25 A/cm2), which, together with transverse magnetic (TM) polarized emission, is identified to be primary limiting factors device performance. Detailed electrical optical analysis further shows that observed droop largely due an effect instead phenomenon. Our studies suggest UV LEDs comparable InGaN blue-emitting wells can potentially achieved if issues related overflow TM emission effectively addressed.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2021

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0055326